Ferro-alloys.com：On January 1, Harbin Institute of Technology, in cooperation with City University of Hong Kong, Massachusetts Institute of Technology and other units, demonstrated the uniform deep elastic strain of a microcrystalline diamond array for the first time through nanomechanics methods. This research highlights the huge application potential of deep elastic strain engineering in photonics, electronics and quantum information technology. The research results were published on Scienceonline under the title of "Achievinglargeuniformtensileelasticityinmicrofabricateddiamond" (Achievinglargeuniformtensileelasticityinmicrofabricateddiamond). Among them, Professor Zhu Jiaqi of the Han Jicai team and the young teacher Acting Bing were co-corresponding authors (Lu Yang, Li Ju, Zhu Jiaqi, AliceHu) and co-first authors (Dang Chaoqun, Jyh-PinChou, Dai Bing, Chang-TiChou), Harbin Institute of Technology is the co-corresponding author and co-first author unit.
Diamond has high hardness, ultra-wide band gap, excellent carrier mobility and excellent thermal conductivity. It is one of the basic materials for the realization of electronics, optoelectronics and quantum chips in the "post-mole" era. At present, the biggest technical obstacle lies in the realization of Effective regulation of gaps. Due to the compact structure of diamond, conventional N-type doping is currently progressing slowly. This study found that through super-large elastic strain control, the band structure of diamond can be fundamentally changed, thereby providing basic and disruptive solutions for elastic strain engineering and the application of single crystal diamond devices.
Nano-scale diamond needles have been proved to have super-large elastic deformation, and the local tensile elastic strain reached over 9%, indicating that deep elastic strain engineering (ESE) produces very high (>5%) tensile and shear in diamond Elastic strain. However, the above-mentioned strain attempts are often limited to bending within a small sample volume, resulting in uneven strain distribution, and the resulting high strain field will be highly localized. The realization of large uniform elastic strains in wafer-level and micron-scale samples to fully utilize deep elastic strain engineering for large-scale integrated processing of diamond devices will have more academic and engineering significance.
In this study, a single crystal diamond bridge structure with a length of about 1 micron and a width of about 100 nanometers was finely processed along the ,  and  directions at room temperature, and samples were obtained under uniaxial tensile loads. The uniform elastic strain within the range can be calculated to achieve a band gap reduction of up to 2eV for single crystal diamond.
The team of Academician Han Jicai and Professor Jiaqi Zhu has been engaged in research on large-size single crystal diamonds, cutting-edge devices and equipment for a long time. With the support of the National Key R&D Program and the National Natural Science Foundation of China, the Phased results have been achieved in solar-blind ultraviolet detection and nuclide batteries, which effectively support the enhancement of the basic research and major engineering R&D capabilities of Harbin Institute of Technology.